Effect of Cl ion implantation on electrical properties of CuInSe2 thin films

Solar Energy Materials and Solar Cells

Volumn 75, Issue 1-2, 2003, Pages 109-113

  Tanaka, Tooru ^a   Yamaguchi, Toshiyuki ^b   Ohshima, Takeshi ^c   Itoh, Hisayoshi ^c   Wakahara, Akihiro ^d   Yoshida, Akira ^d  

^a SAGA UNIVERSITY   (Japan)

^b WAKAYAMA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^c JAPAN ATOMIC ENERGY AGENCY   (Japan)

^d TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Cl doping; CuInSe2; Ion implantation; Solar cell; Thin film

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CHLORINE; COPPER COMPOUNDS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; ION IMPLANTATION; PHOTOVOLTAIC EFFECTS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; THERMAL EFFECTS; THIN FILMS;

EPITAXIAL THIN FILMS;

SOLAR CELLS;

EID: 0037210047     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(02)00115-0     Document Type: Article

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