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Volumn 16, Issue 2, 1998, Pages 665-669

Fabrication of a silicon-vacuum field-emission microdiode with a moving anode

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CATHODES; CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; ETCHING; MASKS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON WAFERS;

EID: 0032023180     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589877     Document Type: Article
Times cited : (3)

References (29)
  • 3
    • 0010314644 scopus 로고
    • edited by H. R. Huff and R. R. Burgess Princeton, NJ
    • J. B. Price, in Semiconductor Silicon 1993, edited by H. R. Huff and R. R. Burgess (Princeton, NJ, 1973), pp. 338-353.
    • (1973) Semiconductor Silicon 1993 , pp. 338-353
    • Price, J.B.1
  • 21
    • 11744284053 scopus 로고
    • Dipl. thesis, Swiss Federal Institute of Technology (ETH), Zurich
    • R. Lenggenhager, Dipl. thesis, Swiss Federal Institute of Technology (ETH), Zurich, 1994.
    • (1994)
    • Lenggenhager, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.