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Volumn 91-92, Issue , 2002, Pages 329-335

Cathodoluminescence of GaAs/(Al,Ga)As and (In,Ga)N/GaN heterostructures grown by molecular beam epitaxy

(6) Jahn, U a Brandt, O a Trampert, A a Waltereit, P a Hey, R a Ploog, K H a

a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

Author keywords

Cathodoluminescence; Extended defects; GaAs heterostructures; GaN heterostructures; Localization effects; Parameter variations; Piezoelectric fields; Quantum well

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL DEFECTS; ELECTRIC FIELDS; EXCITONS; GALLIUM NITRIDE; IMAGE ANALYSIS; MOLECULAR BEAM EPITAXY; PIEZOELECTRICITY; POLARIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPY; SUBSTRATES;

EXCITON LOCALIZATION;

HETEROJUNCTIONS;

EID: 0037197507 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(01)01044-3 Document Type: Conference Paper

Times cited : (2)

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