Studies of growth bands in Si:Ge crystals

Materials Science and Engineering: B

Volumn 91-92, Issue , 2002, Pages 462-465

  Wieteska, K ^a   Wierzchowski, W ^b   Graeff, W ^c   Lefeld Sosnowska, M ^d   Regulska, M ^d  

^a INSTITUTE OF ATOMIC ENERGY   (Poland)

^b Research Group of Integrated Circuits and System Design   (Poland)

^c DESY   (Germany)

^d UNIVERSITY OF WARSAW   (Poland)

Author keywords

Si:Ge; Striation; X ray topography

Indexed keywords

CRYSTAL LATTICES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SYNCHROTRONS; X RAYS;

STRIATION; X RAY TOPOGRAPHY;

CRYSTAL GROWTH;

EID: 0037197504     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)01003-0     Document Type: Conference Paper

References (5)