Topography and lattice parameter of Si:Ge bulk crystals

Journal of Physics D: Applied Physics

Volumn 34, Issue 10 SPEC. ISS. A, 2001, Pages

  Lefeld Sosnowska, M ^a   Grygoruk, Z ^a   Wokulska, K ^b   Blazewicz, J ^c  

^a UNIVERSITY OF WARSAW   (Poland)

^b UNIVERSITY OF SILESIA   (Poland)

^c ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; DEFECTS; ETCHING; LATTICE CONSTANTS; SEMICONDUCTING SILICON;

TOPOGRAPHY;

SINGLE CRYSTALS;

EID: 0035926696     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/34/10a/330     Document Type: Article

References (16)

1. Yonenaga I 1998 J. Mater. Sci. - Mater. Electron. 10 329
2. Freund A K, Gillet J A and Lin Zhong 1998 Proc. SPIE 3448 362
3. Iunin Yu I, Nikitenko V I, Orlov V I, Abrasimov N V, Rossolenko S N and Schröder W 1996 Solid State Phenom. 47-48 485
4. Abrasimov N V, Rossolenko S N, Alex V, Gerhardt A and Schröder W 1996 J. Crystal Growth 166 657
5. Yonenaga I, Matsui A, Tozawa S, Sumino K and Fukuda T 1995 J. Crystal Growth 154 275
6. Keitel S, Malgrange C, Niemöller T and Schneider J R 1999 Acta Crystallogr. A 55 855
7. Lang A R 1959 J. Appl. Phys. 30 1748
8. Lang A R 1959 Acta Crystallogr. 12 249
9. Lang A R 1958 Acta Metall. 5 358
10. Kato N 1980 Acta Crystallogr. A 36 763
11. Kato N 1980 Acta Crystallogr. A 36 770
12. Borowski J 1996 Comput. Mater. Sci. 5 286
13. Borowski J, Lefeld-Sosnowska M and Mogilinski R 1999 Synchrotron Radiation Studies of Materials (Proc. 5th Natl Symp. Synchr. Rad. Users, Warsaw) ed M Lefeld-Sosnowska and J Gronkowski, p 157
14. Bond W L 1960 Acta Crystallogr. 13 814
15. Härtwig J and Großwig G 1989 Phys. Status Solidi a 115 369
16. Dismukes J P, Ekström L and Paff R J 1964 J. Phys. Chem. 68 3021