Structural defects and dislocation-related photoluminescence in erbium-implanted silicon

Materials Science and Engineering: B

Volumn 91-92, Issue , 2002, Pages 167-169

  Sobolev, N A ^a   Emel'yanov, A M ^a   Shek, E I ^a   Sakharov, V I ^a   Serenkov, I T ^a   Nikolaev, Yu A ^a   Vdovin, V I ^b   Yugova, T G ^b   Makovijchuk, M I ^c   Parshin, E O ^c   Pizzini, S ^d  

^a IOFFE INSTITUTE   (Russian Federation)

^b Institute of Chemical Problems for Microelectronics   (Russian Federation)

^c Institute of Microelectronics   (Russian Federation)

^d INFM   (Italy)

Author keywords

Annealing; Defect formation; Ion implantation; Photoluminescence; Silicon

Indexed keywords

ANNEALING; ERBIUM; ETCHING; ION IMPLANTATION; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; RARE EARTHS; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION-RELATED PHOTOLUMINESCENCE (DRL);

SILICON;

EID: 0037197448     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)01008-X     Document Type: Conference Paper

References (8)