Comparison of poly-Si films deposited by UHVCVD and LPCVD and its application for thin film transistors

Vacuum

Volumn 67, Issue 3-4, 2002, Pages 641-645

  Peng, D Z ^a   Zan, H W ^a   Shih, P S ^b   Chang, T C ^c   Lin, C W ^d   Chang, C Y ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b HANNSTAR DISPLAY CORPORATION   (Taiwan)

^c NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^d INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Low pressure chemical vapor deposition (LPCVD); Plasma passivation; Poly Si; Solid phase crystallization (SPC); TFT; Ultra high vacuum chemical vapor deposition (UHVCVD)

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; LEAKAGE CURRENTS; LOW TEMPERATURE EFFECTS; POLYCRYSTALLINE MATERIALS; POLYSILICON; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; ULTRAHIGH VACUUM;

LOW-PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

PLASTIC FILMS;

EID: 0037179796     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(02)00255-5     Document Type: Conference Paper

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