Characterization of polycrystalline silicon thin film transistors fabricated by ultrahigh-vacuum chemical vapor deposition and chemical mechanical polishing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 7 A, 1997, Pages 4278-4282

  Lin, Hsiao Yi ^a   Chang, Chun Yen ^a   Lei, Tan Fu ^a   Cheng, Juing Yi ^a   Tseng, Hua Chou ^a   Chen, Liang Po ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Analytical model; As deposited; CMP; Poly Si TFT; UHV CVD

Indexed keywords

CHEMICAL MECHANICAL POLISHING; POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION;

ACTIVATION ENERGY; CHEMICAL POLISHING; CHEMICAL VAPOR DEPOSITION; ENERGY GAP; GRAIN BOUNDARIES; MATHEMATICAL MODELS; SURFACE ROUGHNESS;

THIN FILM TRANSISTORS;

EID: 0031189837     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.4278     Document Type: Article

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