Influence of the ambient on radiation-induced effects during high-energy electron irradiation of MOS structures

Vacuum

Volumn 69, Issue 1-3, 2002, Pages 87-90

  Kaschieva, S ^a   Dmitriev, S N ^b  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b JOINT INSTITUTE FOR NUCLEAR RESEARCH   (Russian Federation)

Author keywords

C V method; Electron irradiation; MOS structures

Indexed keywords

ELECTRON IRRADIATION; ELLIPSOMETRY; ENERGY GAP; OXIDATION; SILICA; VACUUM TECHNOLOGY;

RADIATION-STIMULATED OXIDATION;

MOS DEVICES;

EID: 0037168624     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(02)00312-3     Document Type: Conference Paper

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