Electron irradiation of ion-implanted n-type Si-SiO2 structures studied by deep-level transient spectroscopy

Applied Physics A: Materials Science and Processing

Volumn 66, Issue 5, 1998, Pages 561-563

  Kaschieva, S ^a   Stefanov, K G ^a   Karpuzov, D ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON BEAMS; ENERGY GAP; ION BOMBARDMENT; ION IMPLANTATION; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SILICA;

ELECTRON IRRADIATION;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0032069935     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050713     Document Type: Article

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