Engineering of InGaAsP layer structures for low divergent long wavelength lasers

Electronics Letters

Volumn 38, Issue 11, 2002, Pages 515-516

  Corbett, B ^a   Kearney, I ^a   Lambkin, P ^a   Justice, J ^a   Buckley, U ^a   Thomas, K ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; EPITAXIAL GROWTH; OPTICAL WAVEGUIDES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM WELLS; SINGLE MODE FIBERS;

LONG WAVELENGTH LASERS;

SEMICONDUCTOR LASERS;

EID: 0037161876     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020369     Document Type: Article

References (7)

1. Tapered thickness MQW waveguide BH MQW lasers
2. 980 nm spread index laser with strain compensated InGaAs/GaAsP/InGaP and 90% fibre coupling efficiency
3. High power CW output from low confinement asymmetric structure diode laser
4. LOW divergence laser structures for cost effective fibre coupling applications
5. 0.7 W in singlemode fibre from 1.48 μm semiconductor unstable-cavity laser with low-confinement asymmetric epilayer structure
6. High butt-coupling efficiency to single-mode fibers using a 1.55 μm InGaAsP laser integrated with a tapered ridge mode transformer
7. 1.5 μm wavelength, SCH-MQW InGaAsP/InP broadened-waveguide laser diodes with low internal loss and high output power