980nm spread index laser with strain compensated InGaAs/GaAsP/InGaP and 90% fibre coupling efficiency

Electronics Letters

Volumn 32, Issue 11, 1996, Pages 1007-1008

  Vakhshoori, D ^a   Hobson, W S ^a   Han, H ^a   Lopata, J ^a   Henein, G E ^a   Wynn, J D ^a   deJong, J ^a   Schnoes, M L ^a   Zydzik, G J ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; FIBER LASERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL FIBER COUPLING; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

DOVETAIL MESA; FIBER COUPLING MEASUREMENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION GROWTH PROCESS; SEMICONDUCTOR JUNCTION LASERS;

SEMICONDUCTOR LASERS;

EID: 0030149275     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960629     Document Type: Article

References (7)