0.7W in singlemode fibre from 1.48μm semiconductor unstable-cavity laser with low-confinement asymmetric epilayer structure

Electronics Letters

Volumn 36, Issue 3, 2000, Pages 221-223

  Delepine, S ^a   Gerard F ^a   Fillion, T ^a   Pasquier, J ^a   Gaborit, F ^a   Chardon, J P ^a   Boubal, F ^a   Salet, P ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

EPILAYER STRUCTURE; FILAMENTATION EFFECTS; MODAL GAIN;

SINGLE MODE FIBERS;

EID: 0343962718     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000205     Document Type: Article

References (5)

1. MATHUR, A., FISHER, M., ZIARI, M., HAGBERG, M., and KOLEV, E.: 'Very high power 1.48 μm semiconductor lasers', Electron. Lett., 1999, 35, (12), pp. 983-985
2. MATHUR, A., ZIARI, M., and HAGBERG, M.: 'High power grating stabilized 1480 nm flared semiconductor pump laser'. OAA'99, Nara, Japan, June 1999, Paper FB5
3. MIKULLA, M., CHAZAN, P., SCHMITT, A., MORGOTT, S., WETZEL, A., WALTHER, M., KIEFER, R., PLETSCHEN, W., BRAUNSTEIN, J., and WEIMANN, G.: 'High-brightness tapered semiconductor laser oscillators and amplifiers with low-modal gain epilayer structures', IEEE Photonics Technol. Lett., 1998, 10, (5), pp. 654-656
4. IORDACHE, G., BUDA, M., ACKET, G.A., VAN DE ROER, T.G., KAUFMANN, L.M.F., KAROUTA, F., JAGADISH, C., and TAN, H.H.: 'Continuous wave operation of low confinement asymmetric structure diode lasers'. CLEO'99, Baltimore, USA, Paper CThVl
5. DELEPINE, S., SALET, P., GÉRARD, F., PINQUIER, A., FILLION, T., PASQUIER, J., DOUSSIÈRE, P., CHARDON, J.-P., DI MAGGIO, M., BOUBAL, F., and GELLY, G.: '370mW coupled into singlemode optical fibre from 1.48μm unstable-cavity laser', Electron. Lett., 1999, 35, (2), pp. 145-146