High-sensitivity and wide-dynamic-range 10 Gbit/s APD/preamplifier optical receiver module

Electronics Letters

Volumn 38, Issue 13, 2002, Pages 650-651

  Matsuda, H ^a   Miura, A ^a   Irie, H ^a   Tanaka, S ^a   Ito, K ^a   Fujisaki, S ^a   Toyonaka, T ^a   Takahashi, H ^a   Chiba, H ^a   Trikura, S ^a   Takeyari, R ^a   Harada, T ^a  

^a OpNext Japan Inc   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); AVALANCHE DIODES; BIT ERROR RATE; HETEROJUNCTION BIPOLAR TRANSISTORS; PHOTODIODES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SENSITIVITY ANALYSIS;

AVALANCHE PHOTODIODES; INDIUM ALUMINUM ARSENIDE; OPTICAL RECEIVER; SILICON GERMANIUM;

OPTICAL COMMUNICATION EQUIPMENT;

EID: 0037142546     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020434     Document Type: Article

References (5)

1. 10-Gbit/s strained MQW DFB-LD transmitter module and superlattice APD receiver module using GaAs MESFET ICs
2. A high-sensitivity APD receiver for 10-Gb/s system applications
3. 10-Gigabit-per-second high-sensitivity and wide-dynamic-range APD-HEMT optical receiver
4. 10 Gbit/s high sensitivity and low-voltage-operation avalanche photodiodes with thin InAlAs multiplication layer and waveguide structure
5. A 0.2 μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT CMOS technology for microwave and high-speed digital applications