A simple approach including gate leakage for calculating the minimum noise figure of GaN HEMTS

Microwave and Optical Technology Letters

Volumn 33, Issue 2, 2002, Pages 113-115

  Oxley, C H ^a  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC FIELDS; ELECTRIC RESISTANCE; ELECTRON GAS; GALLIUM NITRIDE; GATES (TRANSISTOR); LEAKAGE CURRENTS; MATHEMATICAL MODELS; OPTIMIZATION; SIGNAL NOISE MEASUREMENT; TRANSCONDUCTANCE;

DEVICE MODELING; GATE LEAKAGE; MINIMUM NOISE FIGURE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037140136     PISSN: 08952477     EISSN: None     Source Type: Journal    
DOI: 10.1002/mop.10245     Document Type: Article

References (6)

1. t and low microwave noise
2. Summary of widebandgap microwave power devices
3. min on frequency for FETs
4. Optimal noise figure of microwave GaAs MESFETs
5. Analytical noise model with the influence of shot noise induced by the gate leakage current for submicrometer gate-length high electron mobility transistors
6. Calculation of minimum noise figure using the simple Fukui equation for gallium nitride (GaN) HEMTs