Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates

International Journal of Modern Physics B

Volumn 16, Issue 1-2, 2002, Pages 165-172

  Xie, M H ^a   Cheung, S H ^a   Zheng, L X ^a   Tong, S Y ^a,b   Zhang, B S ^c   Yang, H ^c  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^c INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; GALLIUM NITRATE; SILICON DERIVATIVE;

CONFERENCE PAPER; CRYSTAL STRUCTURE; CRYSTALLIZATION; FILM; MOLECULAR MODEL; PROCESS MODEL; QUALITY CONTROL; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR; SURFACE PROPERTY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EID: 0037138111     PISSN: 02179792     EISSN: None     Source Type: Journal    
DOI: 10.1142/s0217979202009603     Document Type: Conference Paper

References (10)