Monte Carlo modelling of multiple transit regions Gunn diodes

Electronics Letters

Volumn 38, Issue 15, 2002, Pages 830-831

  Teoh, Y P ^a   Dunn, G M ^a  

^a UNIVERSITY OF ABERDEEN   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANODES; CALCULATIONS; CARRIER CONCENTRATION; CATHODES; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC FIELDS; MATHEMATICAL MODELS; MONTE CARLO METHODS; SEMICONDUCTOR DOPING;

MULTIPLE TRANSIT REGIONS; TRANSIT REGION DEVICE;

GUNN DIODES;

EID: 0037130399     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020534     Document Type: Article

References (6)

1. Multidomain Gunn diodes
2. Multi-domain Gunn diodes with multiple hot electron launches: A new approach to mm wave GaAs Gunn oscillator optimization
3. Monte Carlo simulation of high field transport and impact ionization in GaAs p(+)in(+) diodes
4. The free-space oscillation of heterojunction GaAs AlGaAs Gunn diodes as a design guide