Free-space oscillation of heterojunction GaAs/AlGaAs gunn diodes as a design guide

Semiconductor Science and Technology

Volumn 14, Issue 5, 1999, Pages

  Harry, M A ^a   Kelly, M J ^a   Dunn, G M ^b   Kearney, M J ^b   Stephens, J ^c   Carr, M ^c  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b LOUGHBOROUGH UNIVERSITY   (United Kingdom)

^c E2V TECHNOLOGIES   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; NATURAL FREQUENCIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

FREE-SPACE OSCILLATION;

GUNN DIODES;

EID: 0032682385     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/5/101     Document Type: Article

References (5)

1. 1-xAs injectors for intervalley transfer in GaAs: theory and experiment Solid-State Electron. 31 613-6
2. Couch N R, Spooner H, Beton P H, Kelly M J, Lee M E, Rees P K and Kerr T M 1989 High-performance, graded AlGaAs injector, GaAs Gunn diodes at 94 GHz IEEE Electron Device Lett. 10 288-90
3. Greenwald Z, Woodard D W, Calawa A R and Eastman L F 1989 The effect of a high energy injection on the performance of mm wave Gunn oscillators Solid-State Electron. 31 1211-4
4. Narayan S Y and Paczkowski J P 1972 Integral heat sink transferred electron oscillators RCA Review 33 752-60
5. Dunn G M, Rees G J, David J P R, Plimmer S A and Herbert D C 1997 Monte Carlo simulation of impact ionization and current multiplication in short GaAs p+in+ diodes 1997 Semicond. Sci. Technol. 12 111-20