Mosaicity and electrical and optical properties of group III nitrides

Journal of Physics Condensed Matter

Volumn 14, Issue 48, 2002, Pages 13025-13030

  Shmidt, N M ^a   Besyul'kin, A N ^a   Dunaevsky, M S ^a   Kolmakov, A G ^b   Sakharov, A V ^a   Usikov, A S ^a   Zavarin, E E ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b BAIKOV INSTITUTE OF METALLURGY AND MATERIALS SCIENCE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; FRACTALS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

MOSAIC STRUCTURE PROPERTIES; MOSAICITY; MULTIFRACTAL PARAMETRIZATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037122023     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/48/347     Document Type: Article

References (6)

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2. Kolmakov A G, Emtsev V V, Lundin W V, Ratnikov V V, Shmidt N M, Titkov A N and Usikov A S 2001 Physica B 308-10 1141
3. Vstovsky G V 1997 Found. Phys. 27 1413
4. Sakharov A V, Lundin W V, Krestnikov I L, Bedarev D A, Tsatsulnikov A F, Usikov A S, Alferov Zh I, Ledentsov N N, Hoffmann A and Bimberg D 2000 Int. Workshop on Nitride Semiconductors technical digest p 55
5. Kolmakov A G and Vstovsky G V 1999 Mater. Sci. Technol. 15 705
6. Casey H C Jr, Muth J, Krishnankutty S and Zavada J M 1996 Appl. Phys. Lett. 68 2867