Investigation of light-induced defect depth profile in hydrogenated amorphous silicon films

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 11 B, 2002, Pages

  Shimizu, Satoshi ^a   Stradins, Paul ^b   Kondo, Michio ^a   Matsuda, Akihisa ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

Depth profile; Electron spin resonance; Hydrogenated amorphous silicon; Light induced defects; Light induced degradation; Recombination; Wet etching

Indexed keywords

DEFECTS; ETCHING; HYDROGENATION; PARAMAGNETIC RESONANCE; THICKNESS MEASUREMENT;

LIGHT-INDUCED DEFECTS (LID);

AMORPHOUS SILICON;

EID: 0037113518     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l1297     Document Type: Article

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