Shape of atomic steps on Si(111) under localized stress

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 8, 2002, Pages 853031-853035

  Omi, Hiroo ^a   Bottomley, David J ^a   Homma, Yoshikazu ^a   Ogino, Toshio ^a   Stoyanov, Stoyan ^b   Tonchev, Vesselin ^b  

^a NTT Basic Research Laboratories   (Japan)

^b INSTITUTE OF PHYSICAL CHEMISTRY   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON DERIVATIVE;

ARTICLE; ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; DENSITY; ELASTICITY; ELECTRON MICROSCOPY; ENERGY; PHYSICS; SHEAR STRESS; STRUCTURE ANALYSIS; SURFACE PROPERTY; TEMPERATURE;

EID: 0037104316     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.66.085303     Document Type: Article

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