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Volumn 29, Issue 5, 2000, Pages 520-524
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Photoluminescence of strain-induced coupled InGaAs/GaAs quantum-dot pairs
a
NEC CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
COMPOSITION EFFECTS;
ELECTRON ENERGY LEVELS;
METALLORGANIC VAPOR PHASE EPITAXY;
PHOTOLUMINESCENCE;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTOR GROWTH;
SEMICONDUCTOR QUANTUM WELLS;
STRAIN;
COUPLED QUANTUM DOTS;
SELF-ASSEMBLED QUANTUM DOTS;
STRAIN-INDUCED QUANTUM DOTS;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 0033741116
PISSN: 03615235
EISSN: None
Source Type: Journal
DOI: 10.1007/s11664-000-0038-z Document Type: Article |
Times cited : (1)
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References (12)
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