AES depth profiling of semiconducting epitaxial layers with thicknesses in the nanometre range using an ion beam bevelling technique

Surface and Interface Analysis

Volumn 25, Issue 6, 1997, Pages 458-463

  Procop, M ^a   Klein, A ^b   Rechenberg, I ^b   Kruger D ^c  

^a BAM FEDERAL INSTITUTE FOR MATERIALS RESEARCH AND TESTING   (Germany)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^c IHP   (Germany)

Author keywords

AES; Depth profiling; Ion beam bevelling

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ION BEAMS; SCANNING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR LASERS;

DEPTH PROFILING; ION BEAM BEVELLING; LINE SCAN TECHNIQUE;

HETEROJUNCTIONS;

EID: 0031162150     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(199706)25:6<458::AID-SIA270>3.0.CO;2-S     Document Type: Article

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