High temperature oxidation of Si(100) by neutral oxygen cluster beam: Coexistence of active and passive oxidation areas

Journal of Applied Physics

Volumn 92, Issue 2, 2002, Pages 1132-1136

  Daineka, D V ^a   Pradere F ^a   Chatelet, M ^a   Fort, E ^b  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^b UNIVERSITÉ PIERRE ET MARIE CURIE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ABRUPT DROPS; ARRHENIUS BEHAVIORS; AVERAGE SIZE; BEAM CROSS SECTION; CIRCULAR GROOVES; CLUSTER BEAMS; CRITICAL FLUX; ETCH RATES; FLUX DENSITY DISTRIBUTION; INNER WALLS; PASSIVE OXIDATION; PROTECTIVE OXIDE LAYERS; REACTIVE STICKING COEFFICIENT; SI(1 0 0); SILICON OXIDATION; SPATIAL PARAMETERS; SUBSTRATE TEMPERATURE; SUPERSONIC SOURCES; SURFACE ETCHING;

ETCHING; GAUSSIAN BEAMS; MOLECULAR OXYGEN; OXIDATION; SILICON; SURFACE REACTIONS;

SILICON OXIDES;

EID: 0037100921     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1480111     Document Type: Article

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