SCOPUS 정보 검색 플랫폼

Volumn 94, Issue 1, 2002, Pages 14-19

Effects of Ni implantation into bulk and epitaxial GaP on structural and magnetic characteristics

(8) Overberg, M E a Theodoropoulou, N b Chu, S N G c Pearton, S J a Abernathy, C R a Hebard, A F b Wilson, R G d Zavada, J M e

a UNIVERSITY OF FLORIDA (United States)

b Agere Systems ^* (United States)

c AGERE SYSTEMS (United States)

d NONE

e U S ARMY RESEARCH OFFICE (United States)

Author keywords

Charge carriers; Ni implantation; Semiconductors

Indexed keywords

ANNEALING; CHARGE CARRIERS; ENERGY GAP; ION IMPLANTATION; MAGNETIZATION; NICKEL; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

WIDE BANDGAP SEMICONDUCTORS;

MAGNETIC SEMICONDUCTORS;

EID: 0037097051 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(02)00055-7 Document Type: Article

Times cited : (2)

References (16)

1
- 0034700461
- (2000) Nature , vol.408 , pp. 944
- Ohno, H.¹ Chibu, D.² Matsukura, F.³ Omiya, T.⁴ Abe, E.⁵ Dietl, T.⁶ Ohno, Y.⁷ Ohtani, K.⁸

2
- 0343563742
- (1997) Phys. Rev. , vol.B56 , pp. 13103
- Van Esch, A.¹ Bockstal, L.² De Boeck, J.³ Verbank, G.⁴ Van Steenbergen, A.⁵ Grietens, B.⁶ Bogaerts, R.⁷ Herlach, F.⁸ Borghs, G.⁹

3
- 0642271291
- (1997) Phys. Rev. , vol.B55
- Dietl, T.¹ Haury, A.² Aubigne, Y.M.³

4
- 0001450230
- (2000) Appl. Phys. Lett. , vol.77 , pp. 4377
- Akinaga, H.¹ Nemeth, S.² De Boeck, J.³ Nistor, L.⁴ Berdes, H.⁵ Borghs, G.⁶ Ofuchi, H.⁷ Oshima, M.⁸

5
- 0031122729
- (1997) J. Appl. Phys. , vol.81 , pp. 4865
- Hayashi, T.¹ Tanaka, M.² Nishinaga, T.³ Shimada, H.⁴

6
- 0029389989
- (1995) Nature , vol.377 , pp. 707
- Shi, J.¹ Kikkawa, J.M.² Proksch, R.³ Schaffer, T.⁴ Awschalom, D.D.⁵ Medelos-Riberio, G.⁶ Petroff, P.M.⁷

7
- 0001013460
- (2000) J. Appl. Phys. , vol.87 , pp. 5636
- Chen, C.¹ Cai, M.² Wang, X.³ Wu, S.⁴ Zhang, M.⁵ Ding, X.⁶ Sun, Y.⁷

8
- 0032573499
- (1998) Science , vol.282 , pp. 1660
- Prinz, G.A.¹

9
- 17044433712
- (2000) Science , vol.287 , pp. 1010
- Dietl, T.¹ Ohno, H.² Matsukura, F.³ Cibert, J.⁴ Ferrand, D.⁵

10
- 0000871012
- (2000) Appl. Phys. Lett. , vol.76 , pp. 3870
- Gebicki, W.¹ Strzeszewski, J.² Kamber, G.³ Szyszko, T.⁴ Podliado, S.⁵

11
- 4444275918
- (2001) Appl. Phys. Lett. , vol.78 , pp. 1276
- Zajac, M.¹ Doradzinski, R.² Gosk, J.³ Szczyko, T.⁴ Palezewski, M.⁵ Grazanaka, G.⁶ Lefeld-Sosnowska, M.⁷ Gebicki, W.⁸ Kaminska, M.⁹ Twardowski, T.¹⁰

12
- 0035926865
- (2001) Appl. Phys. Lett. , vol.78 , pp. 3475
- Theodoropoulou, N.¹ Lee, K.P.² Overberg, M.E.³ Abernathy, C.R.⁴ Pearton, S.J.⁵ Chu, S.N.G.⁶ Wilson, R.G.⁷

13
- 0000847920
- (2001) J. Nanoscience Nanotech. , vol.1 , pp. 101
- Theodoropoulou, N.¹ Lee, K.P.² Overberg, M.E.³ Chu, S.N.G.⁴ Hebard, A.F.⁵ Abernathy, C.R.⁶ Pearton, S.J.⁷ Wilson, R.G.⁸

14
- 85166057632
- San Francisco, April, paper T6.5
- (2001) MRS Spring 2001 Meeting
- Overberg, M.E.¹ Abernathy, C.R.² Pearton, S.J.³ Sharifi, F.⁴ Hebard, A.F.⁵ Theodoropoulou, N.⁶ Von Molnar, S.⁷ Anane, M.⁸ Xiong, P.⁹

15
- 0000337870
- (1993) Int. J. Mod. Phys. , vol.B7 , pp. 4687
- Pearton, S.J.¹

16
- 0035874154
- (2001) Mater. Sci. Eng. , vol.R33 , pp. 51
- Kucheyev, S.O.¹ Williams, J.S.² Pearton, S.J.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.