SCOPUS 정보 검색 플랫폼

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 4, 2002, Pages

Band-gap change in ordered/disordered GaAs1-ySby layers grown on (001) and (111)B InP substrates

(5) Kawamura, Yuichi a,b Gomyo, Akiko a Suzuki, Tohru b Higashino, Toshiyuki a Inoue, Naohisa b

a Osaka Prefecture University (Japan)

b NEC CORPORATION (Japan)

Author keywords

CuPt type; GaAsSb; MBE; Ordered structure

Indexed keywords

ENERGY GAP; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SPECTROPHOTOMETERS; SUBSTRATES;

BAND-GAP CHANGE; ORDERED-DISORDERED STRUCTURE; TRANSMISSION ELECTRON DIFFRACTION;

SEMICONDUCTOR GROWTH;

EID: 0037089134 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.41.l447 Document Type: Letter

Times cited : (13)

References (12)

1
- 0000779506
- (1988) Phys. Rev. Lett. , vol.60 , pp. 2645
- Gomyo, A.¹ Suzuki, T.² Iijima, S.³

2
- 21544462768
- (1990) Appl. Phys. Lett. , vol.56 , pp. 662
- Wei, S.-H.¹ Zunger, A.²

3
- 0024127211
- (1988) Jpn. J. Appl. Phys. , vol.27
- Gomyo, A.¹ Suzuki, T.² Iijima, S.³ Hotta, H.⁴ Fujii, H.⁵ Kawata, S.⁶ Kobayashi, K.⁷ Ueno, Y.⁸ Hino, I.⁹

4
- 0001385347
- (1993) Appl. Phys. Lett. , vol.62 , pp. 1806
- Arent, D.J.¹ Bode, M.² Bertness, K.A.³ Kurtz, S.R.⁴ Olson, J.M.⁵

5
- 3342993481
- (1994) Phys. Rev. Lett. , vol.72 , pp. 673
- Gomyo, A.¹ Makita, K.² Hino, I.³ Suzuki, T.⁴

6
- 0001004345
- (1999) Appl. Phys. Lett. , vol.74 , pp. 976
- Xu, X.G.¹ Hu, J.² Watkins, S.P.³ Matine, N.⁴ Dvorak, M.W.⁵ Bolognes, C.R.⁶

7
- 0032607185
- (1999) Appl. Phys. Lett. , vol.74 , pp. 1951
- Peter, M.¹ Kiefer, R.² Fuchs, F.³ Herres, N.⁴ Winkler, K.⁵ Bachem, K.-H.⁶ Wagner, J.⁷

8
- 18244414032
- (2001) J. Cryst. Growth , vol.227-228 , pp. 294
- Takasaki, H.¹ Kawamura, Y.² Katayama, T.³ Yamamoto, A.⁴ Inoue, N.⁵

9
- 0036478726
- (2002) Jpn. J. Appl. Phys. , vol.41 , pp. 1012
- Higashino, T.¹ Kawamura, Y.² Fujimoto, M.³ Kondo, A.⁴ Takasaki, H.⁵ Inoue, N.⁶

10
- 36549093013
- (1987) Appl. Phys. Lett. , vol.52 , pp. 2013
- Ihm, Y.E.¹ Otsuka, N.² Klem, J.³ Morkoc, H.⁴

11
- 21544458510
- (1990) J. Appl. Phys. , vol.67 , pp. 2310
- Murgatroyd, I.J.¹ Morman, A.G.² Booker, G.R.³

12
- 0642343017
- ed. H. W. Salimink (Kluwer Academic Publishers, Netherlands); NATO ASI Series
- (1993) Physical Properties of Semiconductor Interfaces at Sub Nanometer Scale , pp. 11
- Suzuki, T.¹ Gomyo, A.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.