Fabrication of blue GaN light-emitting diodes by laser etching

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 4, 2002, Pages

  Yang, Fu Hsiang ^a   Hsiao, Chao Jen ^a   Yang, Ying Jay ^a   Lin, Jun Hong ^a   Wang, Lon ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

GaN; ICP; KrF excimer laser; Laser etching; LED

Indexed keywords

ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ETCHING; EXCIMER LASERS; GALLIUM NITRIDE; IRRADIATION; LASER APPLICATIONS; MORPHOLOGY; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; PHOTORESISTS; SEMICONDUCTOR DEVICE MANUFACTURE;

BEER-LAMBERT LAW; LASER ETCHING; LASER IRRADIATION;

LIGHT EMITTING DIODES;

EID: 0037089120     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l468     Document Type: Letter

References (9)