Study on bias-enhanced nucleation of diamonds by simulating the time dependence of bias current

Journal of Applied Physics

Volumn 91, Issue 6, 2002, Pages 3934-3936

  Perng, Kuoguang ^a   Liu, Kuo Shung ^a   Lin, I Nan ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC DIFFUSIONS; BIAS-ENHANCED NUCLEATION; INCUBATION PERIODS; KINETICS OF NUCLEATION; MICROWAVE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION; NEGATIVE BIAS; TIME DEPENDENCE;

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; DIAMONDS; DIFFUSION IN SOLIDS; ION BOMBARDMENT; KINETICS; NUCLEATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

BIAS CURRENTS;

EID: 0037087486     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1452780     Document Type: Article

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