Rotational honeycomb epitaxy of Ru thin films on sapphire (0001) substrate

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 2 B, 2002, Pages

  Yamada, Satoru ^a,c   Nishibe, Yuki ^a   Saizaki, Masato ^b   Kitajima, Hiromichi ^a   Ohtsubo, Shigeru ^a   Morimoto, Akiharu ^b   Shimizu, Tatsuo ^b   Ishida, Katsuei ^a   Masaki, Yuichi ^b  

^a KANAZAWA UNIVERSITY   (Japan)

^b ISHIKAWA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^c TAIYO YUDEN CO LTD   (Japan)

Author keywords

Al2O3; Epitaxial growth; PLD; Pulsed laser ablation; Ru film; Sapphire

Indexed keywords

CRYSTAL LATTICES; CRYSTAL STRUCTURE; CRYSTALLIZATION; CRYSTALLOGRAPHY; EPITAXIAL GROWTH; HONEYCOMB STRUCTURES; LASER ABLATION; LASER PULSES; RUTHENIUM; SAPPHIRE; X RAY DIFFRACTION ANALYSIS;

PULSED LASER ABLATION;

THIN FILMS;

EID: 0037085224     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.L206     Document Type: Article

References (16)