SCOPUS 정보 검색 플랫폼

Volumn 91, Issue 3, 2002, Pages 1973-1977

High-temperature healing of interfacial voids in GaAs wafer bonding

Author keywords

[No Author keywords available]

Indexed keywords

BONDING INTERFACES; BONDING PROCESS; HIGH TEMPERATURE; INTERFACIAL VOIDS; PATTERNED WAFERS; PROCESSING PARAMETERS; SURFACE IRREGULARITIES;

CRYSTALLITES; GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM;

WAFER BONDING;

EID: 0037084299 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1430888 Document Type: Article

Times cited : (10)

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