Enhancement of secondary electron emission by annealing and microwave hydrogen plasma treatment of ion-beam-damaged diamond films

Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 2481-2486

  Laikhtman, A ^a   Hoffman, A ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER; BONDING STRUCTURE; BULK DIFFUSIONS; CRYSTAL QUALITIES; DAMAGED LAYERS; DIAMOND SURFACES; ELECTRON EMISSION PROPERTIES; FILM SURFACES; HYDROGEN PLASMA EXPOSURES; HYDROGEN PLASMA TREATMENTS; HYDROGEN PLASMAS; LOW ETCHING RATES; MICROWAVE HYDROGEN PLASMAS; NEAR SURFACE REGIONS; NEAR-EDGE X-RAY ABSORPTION FINE STRUCTURE SPECTROSCOPIES; NEAR-SURFACE; NEGATIVE ELECTRON AFFINITY; OXYGEN ADSORPTION; POLYCRYSTALLINE DIAMOND FILMS; SECONDARY ELECTRON EMISSIONS; SURFACE HYDROGEN;

AMORPHOUS CARBON; ANNEALING; DEGRADATION; DESORPTION; DIAMONDS; GAS ADSORPTION; HYDROGEN; ION BEAMS; ION BOMBARDMENT; OXYGEN; PHOTOELECTRONS; PLASMA APPLICATIONS; SECONDARY EMISSION; VOLTAGE DIVIDERS; X RAY PHOTOELECTRON SPECTROSCOPY; XENON;

DIAMOND FILMS;

EID: 0037084035     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1432479     Document Type: Article

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