1/f noise in pentacene and poly-thienylene vinylene thin film transistors

Journal of Applied Physics

Volumn 91, Issue 2, 2002, Pages 719-723

  Vandamme, L K J ^a   Feyaerts, R ^a   Trefán, Gy ^a   Detcheverry, C ^b  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; CARRIER NUMBERS; CHANNEL RESISTANCE; CURRENT FLUCTUATIONS; DEVICE QUALITY; DIAGNOSTIC TOOLS; DRAIN VOLTAGE; DRAIN-SOURCE CHANNELS; GATE VOLTAGES; GATE-SOURCE VOLTAGE; HOOGE'S EMPIRICAL RELATION; LOW FREQUENCY; ORGANIC MATERIALS; PENTACENE THIN FILM TRANSISTORS; PENTACENES; SERIES RESISTANCES;

ELECTRIC CURRENTS; ELECTRIC RESISTANCE; FIELD EFFECT TRANSISTORS; THIN FILM TRANSISTORS; THIN FILMS;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 0037080878     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1423389     Document Type: Article

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