Interface properties and in-plane linear photoluminescence polarization in highly excited type-II ZnSe/BeTe heterostructures with equivalent and nonequivalent interfaces

Journal of Applied Physics

Volumn 91, Issue 2, 2002, Pages 652-657

  Zaitsev, S V ^a   Maksimov, A A ^a   Kulakovskii, V D ^a   Tartakovskii, I I ^a   Yakovlev, D R ^b   Ossau, W ^b   Hansen, L ^b   Landwehr, G ^b   Waag, A ^c  

^a INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^b UNIVERSITY OF WÜRZBURG   (Germany)

^c UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BUILT-IN ELECTRIC FIELDS; EXCITATION DENSITY; EXCITATION POWER; INTERFACE CONFIGURATION; INTERFACE PROPERTY; LINEARLY POLARIZED; NONRADIATIVE RECOMBINATION RATES; PHOTOLUMINESCENCE POLARIZATION; POLARIZATION ANISOTROPY; POLARIZATION DEGREE; POLARIZATION SPECTROSCOPY; RADIATIVE RECOMBINATION;

CARRIER CONCENTRATION; ELECTRIC FIELDS; SEMICONDUCTOR QUANTUM WELLS; ZINC;

POLARIZATION;

EID: 0037080707     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1421039     Document Type: Article

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