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Volumn 91, Issue 2, 2002, Pages 823-831

Power gain and dissipation in quantum-dot cellular automata

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CONFIGURATION; COMPUTING ELEMENT; DENSITY MATRIX FORMALISM; DISSIPATIVE PROCESS; ENERGY FLOW; ENERGY LOST; ENERGY RELAXATION TIME; EQUATION OF MOTION; MOLECULAR DENSITY; POWER GAINS; QUANTUM-DOT CELLULAR AUTOMATA; SIGNAL POWER; THEORETICAL APPROACH; TWO-STATE MODEL;

EID: 0037080524     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1421217     Document Type: Article
Times cited : (399)

References (25)
  • 3
    • 0035330944 scopus 로고    scopus 로고
    • The QCA concept can be extended to the quantum-computing regime. See G. Toth and C. S. Lent, Phys. Rev. A 63, 052315 (2001).
    • (2001) Phys. Rev. A , vol.63 , pp. 052315
    • Toth, G.1    Lent, C.S.2
  • 13
    • 0034595813 scopus 로고    scopus 로고
    • C. S. Lent, Science 288, 1597 (2000).
    • (2000) Science , vol.288 , pp. 1597
    • Lent, C.S.1
  • 17
    • 33845456247 scopus 로고    scopus 로고
    • note
    • We use the sign convention for the Pauli matrices of Ref. 13.
  • 24
    • 33845420745 scopus 로고    scopus 로고
    • SIA road map (revision 2000). In 2001 CMOS technology for high performance applications will have the following characteristics: on chip local clock frequencies will attain 1.77 GHz, there will be 122 million transistors on a chip, and a chip will dissipate 130 W of power. These characteristics combine to give an average device power of 1.07 μW/transistor and a device switching energy of 0.6 fJ. The predictions for high-performance CMOS applications in the year 2014 include on chip local clock frequencies of 13.5 GHz, 11052 million transistors on a chip, and a chip will dissipate 186 W of power. These characteristics combine to give an average device power of 16.8 nW/transistor and a device switching energy of 1.25 aJ.
    • SIA Road Map (Revision 2000)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.