Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs

Materials Science and Engineering: B

Volumn 89, Issue 1-3, 2002, Pages 444-448

  Prest, M J ^a   Palmer, M J ^a   Grasby, T J ^a   Phillips, P J ^a   Mironov, O A ^a   Parker, E H C ^a   Whall, T E ^a   Waite, A M ^b   Evans, A G R ^b   Watling, J R ^c   Asenov, A ^c   Barker, J R ^c  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^c UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Low frequency noise; MOSFET; SiGe; Transconductance

Indexed keywords

CAPACITANCE MEASUREMENT; CARRIER MOBILITY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; TRANSCONDUCTANCE; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS;

LOW FREQUENCY NOISE;

MOSFET DEVICES;

EID: 0037074849     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00858-3     Document Type: Conference Paper

References (8)