Super self-aligned technology of ultra-shallow junction in MOSFETs using selective Si1-xGex CVD

Materials Science and Engineering: B

Volumn 89, Issue 1-3, 2002, Pages 120-124

  Yamashiro, Tadayoshi ^a   Kikuchi, Toshifumi ^a   Ishii, Makoto ^a   Honma, Fumitaka ^a   Sakuraba, Masao ^a   Matsuura, Takashi ^a   Murota, Junichi ^a   Tsuchiya, Toshiaki ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b SHIMANE UNIVERSITY   (Japan)

Author keywords

Ge fraction; In situ doped Si1 xGex; S3EMOSFET; Short channel effect; Tungsten

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; IMPURITIES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS;

SHORT CHANNEL EFFECTS; ULTRA-SHALLOW JUNCTIONS;

MOSFET DEVICES;

EID: 0037074845     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00814-5     Document Type: Conference Paper

References (10)