Fabrication of 0.1 μm mosfet with super self-aligned ultrashallow junction electrodes using selective si1-xgex CVD

European Solid-State Device Research Conference

Volumn , Issue , 1997, Pages 376-379

  Murota, J ^a   Ishii, M ^b   Goto, K ^c   Sakuraba, M ^a   Matsuura, T ^a   Kudoh, Y ^a   Koyanagi, M ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b Technology Development Department   (Japan)

^c MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRODES; GERMANIUM; MOSFET DEVICES; THRESHOLD VOLTAGE;

CURRENT DRIVABILITY; EFFECTIVE CHANNEL LENGTH; FABRICATION PROCESS; SATURATION CHARACTERISTIC; SHORT-CHANNEL EFFECT; SOURCE/DRAIN JUNCTIONS; SOURCE/DRAIN REGIONS; ULTRA SHALLOW JUNCTION;

FABRICATION;

EID: 84907515443     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.1997.194444     Document Type: Conference Paper

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