Phosphorus profile control in low-temperature silicon epitaxy by reduced pressure chemical vapor deposition

Materials Science and Engineering: B

Volumn 89, Issue 1-3, 2002, Pages 314-318

  Suvar, E ^a   Radamson, H H ^a   Grahn, J V ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY KTH   (Sweden)

Author keywords

Chemical vapor deposition; Low growth temperature; Phosphorus; Reduced pressure; Segregation; Silicon epitaxy

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; PHOSPHORUS; PRESSURE EFFECTS; SILANES; THERMOOXIDATION; X RAY DIFFRACTION ANALYSIS;

CHEMICAL OXIDATION;

SEMICONDUCTING SILICON;

EID: 0037074789     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00806-6     Document Type: Conference Paper

References (13)