Observation of radiation induced latchup in the readout electronics of NA50 multiplicity detector

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 476, Issue 3, 2002, Pages 758-764

  Alessandro, B ^a   Beole S ^b   Bonazzola, G ^b   Crescio, E ^b   De Witt, J ^c   Giubellino, P ^a   Idzik, M ^a,d   MarzariChiesa, A ^b   Masera, M ^b   Prino, F ^a,b   Ramello, L ^e   Mendes, P Rato ^a   Riccati, L ^a   Sitta, M ^e  

^a SEZIONE DI TORINO   (Italy)

^b UNIVERSITY OF TURIN   (Italy)

^c UNIVERSITY OF CALIFORNIA SANTA CRUZ   (United States)

^d AGH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Poland)

^e UNIVERSITY OF EASTERN PIEDMONT   (Italy)

Author keywords

Latchup; Microelectronics; Nuclear electronics; Radiation effects; Radiation tolerant electronics

Indexed keywords

CMOS INTEGRATED CIRCUITS; IONIZING RADIATION; MICROSTRIP DEVICES; RADIATION DAMAGE;

MULTIPLICITY DETECTORS (MD);

RADIATION DETECTORS;

EID: 0037059372     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(01)01672-2     Document Type: Conference Paper

References (8)

1. A fast, high-granularity silicon multiplicity detector for the NA50 experiment at CERN
2. Fast bipolar front-end for binary readout of silicon strip detectors
3. A pipeline and bus interface chip for silicon strip detector readout
4. Analysis of radiation effects on silicon strip detectors in the NA50 experiment
5. Single particle-induced latchup
6. The influence of VLSI technology evolution on radiation-induced latchup in space systems
7. The effect of temperature on single particle latchup