SCOPUS 정보 검색 플랫폼

Volumn 506, Issue 1-2, 2002, Pages 33-46

Epitaxial growth and interfacial structure of Sn on Si(1 1 1)-(7 × 7)

(3) Roldan Cuenya, B a Doi, M a Keune, W a

a UNIVERSITY OF DUISBURG ESSEN (Germany)

Author keywords

Epitaxy; Growth; Low energy electron diffraction (LEED); Metal semiconductor interfaces; M ssbauer spectroscopy; Reflection high energy electron diffraction (RHEED); Silicon; Tin

Indexed keywords

CARRIER CONCENTRATION; DEPOSITION; EPITAXIAL GROWTH; LOW ENERGY ELECTRON DIFFRACTION; MONOLAYERS; MOSSBAUER SPECTROSCOPY; PHASE INTERFACES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; TIN;

INTERFACIAL STRUCTURE; SUBMONOLAYERS;

SURFACE CHEMISTRY;

EID: 0037052805 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(01)01662-4 Document Type: Article

Times cited : (18)

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