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Surface Science

Volumn 502-503, Issue , 2002, Pages 86-90

IR line width broadening at nearly ideal H-termination region on Si(1 0 0) surfaces

(5) Wang, Zhi Hong a Noda, Hideyuki a Nonogaki, Youichi b Yabumoto, Norikuni c Urisu, Tsuneo a,b

a GRADUATE UNIVERSITY FOR ADVANCED STUDIES (Japan)

b INSTITUTE FOR MOLECULAR SCIENCE (Japan)

c NTT Advanced Technology Corporation (Japan)

Author keywords

Deuterium; Diffusion and migration; Hydrogen atom; Infrared absorption spectroscopy; Silicon

Indexed keywords

ABSORPTION SPECTROSCOPY; DEUTERIUM; DIFFUSION; HYDROGEN; INFRARED SPECTROSCOPY; SILICON;

INFRARED REFLECTION ABSORPTION SPECTROSCOPY (IRRAS);

SURFACE CHEMISTRY;

EID: 0037051819 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(01)01903-3 Document Type: Conference Paper

Times cited : (3)

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