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Volumn 39, Issue 12 B, 2000, Pages 6985-6989

Initial stage of hydrogen etching of Si surfaces investigated by infrared reflection absorption spectroscopy

Author keywords

Adjacent dihydride; Buried metal layer; Etching; Hydrogen; Infrared reflection absorption spectroscopy; Si; Trihydride

Indexed keywords

ABSORPTION SPECTROSCOPY; ETCHING; HYDRIDES; HYDROGEN;

EID: 0034431230     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.6985     Document Type: Article
Times cited : (4)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.