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Volumn 39, Issue 12 B, 2000, Pages 6985-6989
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Initial stage of hydrogen etching of Si surfaces investigated by infrared reflection absorption spectroscopy
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Author keywords
Adjacent dihydride; Buried metal layer; Etching; Hydrogen; Infrared reflection absorption spectroscopy; Si; Trihydride
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Indexed keywords
ABSORPTION SPECTROSCOPY;
ETCHING;
HYDRIDES;
HYDROGEN;
INFRARED REFLECTION ABSORPTION SPECTROSCOPY;
SEMICONDUCTING SILICON;
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EID: 0034431230
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.39.6985 Document Type: Article |
Times cited : (4)
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References (19)
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