Highly crystalline 5H-polytype of sp3-bonded boron nitride prepared by plasma-packets-assisted pulsed-laser deposition: An ultraviolet light emitter at 225 nm

Applied Physics Letters

Volumn 81, Issue 24, 2002, Pages 4547-4549

  Komatsu, Shojiro ^a   Kurashima, Keiji ^a   Kanda, Hisao ^a   Okada, Katsuyuki ^a   Mitomo, Mamoru ^a   Moriyoshi, Yusuke ^b   Shimuzu, Yoshiki ^b   Shiratani, Masaharu ^c   Nakano, Toshiki ^d   Samukawa, Seiji ^e  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b HOSEI UNIVERSITY   (Japan)

^c KYUSHU UNIVERSITY   (Japan)

^d NATIONAL DEFENSE ACADEMY   (Japan)

^e TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; ELECTRON DIFFRACTION; ELECTRON ENERGY LOSS SPECTROSCOPY; LIGHT EMISSION; PULSED LASER DEPOSITION; SEMICONDUCTOR DOPING;

ULTRAVIOLET LIGHT EMITTERS;

CUBIC BORON NITRIDE;

EID: 0037049656     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1527987     Document Type: Article

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