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Volumn 81, Issue 24, 2002, Pages 4616-4618

Laterally doped heterostructures for III-N lasing devices

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; PLASMAS; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES; STIMULATED EMISSION;

EID: 0037049473     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1527985     Document Type: Article
Times cited : (8)

References (16)
  • 6
    • 0000224881 scopus 로고    scopus 로고
    • H. Hirayama, Y. Enomoto, A. Kinoshia, A. Hirata, and Y. Aoyagi, Appl. Phys. Lett. 80, 37 (2002); ibid. 77, 175 (2000).
    • (2000) Appl. Phys. Lett. , vol.77 , pp. 175
  • 10
    • 0000616804 scopus 로고    scopus 로고
    • P. Kozodoy, M. Hansen, S.P. DenBaars, and U. Mishra, Appl. Phys. Lett. 74, 3681 (2999); ibid. 75, 2444 (1999).
    • (1999) Appl. Phys. Lett. , vol.75 , pp. 2444
  • 12
    • 0035576028 scopus 로고    scopus 로고
    • and the references therein
    • Semiconductor lasers with lateral injection were discussed for InAs/GaSb type-II low-dimensional heterostructures: see, B. Laikhman, S. Luryi, and G. Belenky, J. Appl. Phys. 90, 5478 (2001), and the references therein.
    • (2001) J. Appl. Phys. , vol.90 , pp. 5478
    • Laikhman, B.1    Luryi, S.2    Belenky, G.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.