A new silicon-based ferroelectric sandwich structure

Chinese Physics Letters

Volumn 18, Issue 1, 2001, Pages 132-133

  Ren, Tian Ling ^a   Zhang, Lin Tao ^a   Liu, Li Tian ^a   Li, Zhi Jian ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC FIELDS; FERROELECTRIC FILMS; FERROELECTRICITY; LEAD TITANATE; SANDWICH STRUCTURES; SILICON; SOL-GEL PROCESS; SOL-GELS;

ANNEALING TEMPERATURES; CAPACITANCE VOLTAGE; DIELECTRIC FREQUENCIES; ELECTRIC FIELD FREQUENCY; FABRICATION PROCESS; FREQUENCY PROPERTIES; PBTIO 3; SILICON-BASED; SOL- GEL METHODS; VOLTAGE POLARIZATION;

TITANIUM COMPOUNDS;

EID: 0035582571     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/18/1/346     Document Type: Article

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