About an influence of Ar ion beam of very low energy on a-Si:H properties

Vacuum

Volumn 67, Issue 1, 2002, Pages 149-153

  Kopani M ^a   Mikula, M ^b   Jergel, M ^c   Falcony, C ^c   Ortega, L ^d   Pincik E ^e  

^a Bratislava   (Slovakia)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^c DEPARTAMENTO DE FÍSICA   (Mexico)

^d LABORATOIRE DE CRISTALLOGRAPHIE   (France)

^e INSTITUTE OF PHYSICS   (Slovakia)

Author keywords

a Si:H layers; Infrared spectroscopy; Ion beam modification; X ray diffraction

Indexed keywords

AMORPHOUS SILICON; ARGON; INFRARED SPECTROSCOPY; ION BOMBARDMENT; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ION BEAM MODIFICATION;

ION BEAMS;

EID: 0037009258     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(02)00192-6     Document Type: Conference Paper

References (11)