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Materials Science and Engineering C

Volumn 19, Issue 1-2, 2002, Pages 129-133

Magnetic tunnel junctions for magnetic random access memory applications

(3) Guth, M a Schmerber, G a Dinia, A a

a INSTITUT DE PHYSIQUE ET CHIMIE DES MATÉRIAUX DE STRASBOURG (France)

Author keywords

Magnetic tunnel junction; MRAM; ZnS

Indexed keywords

MAGNETIC RANDOM ACCESS MEMORY (MRAM); MAGNETIC TUNNEL JUNCTIONS (MTJ);

ANTIFERROMAGNETIC MATERIALS; MAGNETORESISTANCE; OXIDATION; RANDOM ACCESS STORAGE; SPUTTERING;

TUNNEL JUNCTIONS;

MICROELECTRONICS;

EID: 0037006005 PISSN: 09284931 EISSN: None Source Type: Journal
DOI: 10.1016/S0928-4931(01)00464-7 Document Type: Article

Times cited : (8)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.