High temperature inductive switching of SIC GTO and diode

IEEE Conference Record of Power Modulator Symposium

Volumn , Issue , 2002, Pages 207-209

  Bayne, S B ^a   Tipton, C W ^a   Griffin, T E ^a   Scozzie, C J ^a   Geil, B R ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; HIGH TEMPERATURE OPERATIONS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SEMICONDUCTOR SWITCHES; SILICON CARBIDE;

FORWARD BLOCKING VOLTAGE; HIGH TEMPERATURE INDUCTIVE SWITCHING; REVERSE BLOCKING VOLTAGE; SWITCHING DEVICE;

THYRISTORS;

EID: 0036999167     PISSN: 10768467     EISSN: None     Source Type: Journal    
DOI: 10.1109/MODSYM.2002.1189452     Document Type: Article

References (8)

1. M. Trivedi and K. Shenai, “Performance of Silicon Carbide Devices in Power Converters,” Energy Conversion Engineering Conference and Exhibit (IECEC) 35th Intersociety, vol. 1, pp. 37-46, Jul. 2000.
2. R. R. Siergiej, J. B. Casady, A. K. Agarwal, L. B. Rowland, S. Seshadri, S. Mani, P. A. Sanger, and C. D. Brandt, “1000V 4H-SiC Gate Turn Off (GTO) Thyristor,” Compound Semiconductors, IEEE International Symposium, pp. 363-366, 1997.
3. S. H. Ryu, A. K. Agarwal, R. Singh, and J. W. Palmour, “3100 V, Asymmetrical, Gate Turn-Off (GTO) Thyristors in 4H-SiC,” IEEE Electron Device Letters, vol. 22, pp. 127-129, 2001.
4. A. K. Agarwal, P. A. Ivanov, M. E. Levinshtein, J. W. Palmour, S. L. Rumyantsev, S. H. Ryu, and M. S. Shur, “Turn-off Performance of a 2.6 kV 4H-SiC Asymmetrical GTO Thyristor,” Material Science Forum, vol. 353-356, pp. 743-746, 2001.
5. X. Li, K. Tone, L. H. Cao, P. Alexandrov, L. Fursion and J. H. Zhao, “Theoretical and Experimental Study of 4H-SiC Junction Edge Termination,” Material Science Forum, vol. 338-342, pp. 1375-1378, 2000.
6. A. Agarwal, S. H. Ryu, R. Singh, O. Kordina, and J. W. Palmour, “2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development,” Material Science Forum, vol. 338-342, pp. 1387-1390, 2000.
7. S. H. Ryu, A. K. Agarwal, R. Singh, and J. W. Palmour, “3100 V, Asymmetrical, Gate Turn-Off (GTO) Thyristors in 4H-SiC,” IEEE Electron Device Letters, vol. 22, pp. 127-129, 2001.
8. N. Mohan, T. Undeland, and W. Robbins, Power Electronics Converters, Applications, and Design, New York: Wiley, 1995, pp. 613-695.