Performance evaluation of Silicon Carbide devices in power converters

35th Intersociety Energy Conversion Engineering Conference and Exhibit

Volumn , Issue , 2000, Pages 37-46

  Shenai, Krishna ^a   Neudeck, Philip G ^b  

^a 1120 Science and Engineering Offices   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DC-DC CONVERTERS; ELECTRIC RECTIFIERS; ENERGY CONVERSION; GALLIUM ARSENIDE; HIGH TEMPERATURE OPERATIONS; III-V SEMICONDUCTORS; JUNCTION GATE FIELD EFFECT TRANSISTORS; NITROGEN COMPOUNDS; POWER MOSFET; RECTIFYING CIRCUITS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DIODES; SILICON CARBIDE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; MOSFET DEVICES; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SWITCHING CIRCUITS;

DYNAMIC SWITCHING; HIGH-FREQUENCY ELECTRONICS; LOW-VOLTAGE RECTIFIER; SILICON CARBIDE DEVICES; SILICON CARBIDES (SIC); SILICON PIN DIODE; SILICON POWER MOSFET; TECHNOLOGY OPTIMIZATION;

FLUORINE COMPOUNDS; POWER CONVERTERS;

PIN DIODES; SOFT SWITCHING BUCK CONVERTERS;

EID: 84860983583     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.2514/6.2000-2805     Document Type: Conference Paper

References (20)

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2. nd Ed., 1992.
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5. Deepak Divan, "Low-Stress Switching for Efficiency, " IEEE Spectrum, December 1996, pp. 33-39.
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7. S. Pendharkar and K. Shenai, "Zero Voltage Switching Behavior of Punch-Through and Non Punch-Through IGBTs, " IEEE Trans. Electron Devices, vol. 45, no. 8, pp. 1826-1835, August 1998.
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