AMPS modeling of nanocrystalline SI P-layer in A-SI NIP solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2002, Pages 1234-1237

  Liao, X B ^a   Wang, W ^a   Deng, X ^a  

^a UNIVERSITY OF TOLEDO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ENERGY GAP; HYDROGEN; INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; SILICON;

ANALYSIS OF MICROELECTRONIC AND PHOTONIC STRUCTURES; HYDROGENATED NANOCRYSTALLINE SILICON;

SILICON SOLAR CELLS;

EID: 0036957819     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. For AMPS, see http://www.psu.edu/dept/AMPS/.
2. P. Agarwal, H. Povolny, S. Han and X. Deng, "Study of a-SiGe:H Films and n-i-p Devices used in High Efficiency Triple Junction Solar Cells", J. of Non-Cryst. Solids, 2002 pp. 1213-1218.
3. Q. Ye, R. Tsu and E.H. Nicollian, "Resonant tunneling via microcrystalline Si quantum confinement", Phys. Rev. B 44, 1991, pp. 1806-1811.
4. B. Delley and E.F. Steigmeier, "Quantum confinement in Si nanocrystals", Phys. Rev. B 47, 1997, pp. 1397-1400.
5. D. J. K. Rath, C.H.M. van der Werl, F. A. Rubinelli and R.E.I. Schropp, "Development of a-Si based p-i-n solar cell in a superstrate structure with p-microcrystalline Si as window layer", 25th IEEE PVSC, 1996, pp. 1101-1105.